The versatility of hot-filament activated chemical vapor deposition

被引:55
|
作者
Schaefer, Lothar [1 ]
Hoefer, Markus
Kroeger, Roland
机构
[1] Fraunhofer Inst Surface Engn & Thin Films, D-38108 Braunschweig, Germany
[2] Univ Bremen, Inst Solid State Phys, D-28359 Bremen, Germany
关键词
chemical vapor deposition; hot-filament activation; polycrystalline diamond; carbide coatings; silicon coatings;
D O I
10.1016/j.tsf.2006.07.073
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In the field of activated chemical vapor deposition (CVD) of polycrystalline diamond films, hot-filament activation (HF-CVD) is widely used for applications where large deposition areas are needed or three-dimensional substrates have to be coated. We have developed processes for the deposition of conductive, boron-doped diamond films as well as for tribological crystalline diamond coatings on deposition areas up to 50 cm x 100 cm. Such multi-filament processes are used to produce diamond electrodes for advanced electrochemical processes or large batches of diamond-coated tools and parts, respectively. These processes demonstrate the high degree of uniformity and reproducibility of hot-filament CVD. The usability of hot-filament CVD for diamond deposition on three-dimensional substrates is well known for CVD diamond shaft tools. We also develop interior diamond coatings for drawing dies, nozzles, and thread guides. Hot-filament CVD also enables the deposition of diamond film modifications with tailored properties. In order to adjust the surface topography to specific applications, we apply processes for smooth, fine-grained or textured diamond films for cutting tools and tribological applications. Rough diamond is employed for grinding applications. Multilayers of fine-grained and coarse-grained diamond have been developed, showing increased shock resistance due to reduced crack propagation. Hot-filament CVD is also used for in situ deposition of carbide coatings and diamond-carbide composites, and the deposition of non-diamond, silicon-based films. These coatings are suitable as diffusion barriers and are also applied for adhesion and stress engineering and for semiconductor applications, respectively. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:1017 / 1024
页数:8
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