THE EFFECT OF FILAMENT TEMPERATURE ON THE GROWTH OF DIAMOND USING HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION

被引：2
|
作者：
VENTER, A [1 ]
NEETHLING, JH [1 ]
机构：
[1] UNIV PORT ELIZABETH,DEPT PHYS,PORT ELIZABETH 6000,SOUTH AFRICA
来源：
DIAMOND AND RELATED MATERIALS | 1994年 / 3卷 / 1-2期
关键词：
D O I：
10.1016/0925-9635(94)90052-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Diamond films have been deposited on Si(001) by hot-filament chemical vapour deposition and characterized by transmission and scanning electron microscopy, X-ray diffraction and energy-dispersive X-ray spectroscopy. The temperature of the filament was found to be the critical factor determining whether polycrystalline diamond, polycrystalline tungsten or diamond layers contaminated with tungsten were deposited. The effect of surface roughening on the nucleation density of the diamond particles was also investigated.
引用
收藏
页码：168 / 172
页数：5
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