Introduction of New Materials into CMOS Devices

被引：2

作者：

Iwai, Hiroshi ^{[1
]}

机构：

[1] Tokyo Inst Technol, Frontier Res Ctr, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

HIGH PURITY SILICON 12 | 2012年 / 50卷 / 05期

关键词：

D O I：

10.1149/05005.0013ecst

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

With the progress of recent smart society, demand for high-performance low-power CMOS devices becomes stronger and stronger. Corresponding to the situation, the downsizing of CMOS device has been accelerated significantly. In order to solve the problem inherent in the downsizing, new structures and new materials are being aggressively introduced into MOSFETs. They are, for example, nanowire channel, metal/high-k gate stack, metal/silicide source/drain. In this paper, the status of the new material introduction to CMOS devices is described.

引用

页码：13 / 20

页数：8

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