Exploratory materials and devices to advance CMOS beyond the classical Si roadmap

被引：1
|
作者：
Heyns, Marc [1 ]
机构：
[1] IMEC VZW, B-3001 Louvain, Belgium
来源：
ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES X | 2012年 / 187卷
关键词：
CMOS; high-kappa; germanium; III/V; TunnelFET;
D O I：
10.4028/www.scientific.net/SSP.187.3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The megasonic cleaning efficiency is evaluated as a function of the angle of incidence of acoustic waves on a Si wafer. Acoustic Schlichting streaming alone is not able to remove nanoparticles smaller than 400 nm. It is shown that oscillating or collapsing behavior of bubbles are responsible for removing nanoparticles smaller than 400 nm during a cleaning process with ultrasound. Optimal particle removal efficiency is obtained around the angle of acoustic transmission of the silicon wafer.
引用
收藏
页码：3 / 5
页数：3
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