Corrosion-free dry etch patterning of magnetic random access memory stacks: Effects of ultraviolet illumination

被引：6

作者：

Cho, H ^{[1
]}

Lee, KP

Jung, KB

Pearton, SJ

Marburger, J

Sharifi, F

Hahn, YB

Childress, JR

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Phys, Gainesville, FL 32611 USA

[3] Chonnam Natl Univ, Sch Chem Engn & Technol, Chonju 561756, South Korea

[4] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 09期

关键词：

D O I：

10.1063/1.372718

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Individual layers of Ni0.8Fe0.2, Ni0.8Fe0.13Co0.07, TaN, and CrSi, and a full magnetic random access memory stack consisting of NiFeCo/CoFe/Cu/CoFe/NiFeCo/TaN/CrSi multilayers, were etched in high density Cl-2/Ar plasmas either with or without concurrent ultraviolet (UV) illumination. Under optimized conditions, etch rate enhancement up to a factor of 5 was obtained for NiFeCo, TaN, and CrSi with UV illumination; whereas the etch rate of NiFe was retarded. Post-etch cleaning with H-2 or SF6 plasmas or H2O rinsing was necessary in all cases in order to prevent corrosion of the metal layers from chlorinated etch residues. (C) 2000 American Institute of Physics. [S0021-8979(00)43708-4].

引用

页码：6397 / 6399

页数：3

共 46 条

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Cho, H
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