Corrosion-free dry etch patterning of magnetic random access memory stacks: Effects of ultraviolet illumination

被引：6
|
作者：
Cho, H [1 ]
Lee, KP
Jung, KB
Pearton, SJ
Marburger, J
Sharifi, F
Hahn, YB
Childress, JR
机构：
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[2] Univ Florida, Dept Phys, Gainesville, FL 32611 USA
[3] Chonnam Natl Univ, Sch Chem Engn & Technol, Chonju 561756, South Korea
[4] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 09期
关键词：
D O I：
10.1063/1.372718
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Individual layers of Ni0.8Fe0.2, Ni0.8Fe0.13Co0.07, TaN, and CrSi, and a full magnetic random access memory stack consisting of NiFeCo/CoFe/Cu/CoFe/NiFeCo/TaN/CrSi multilayers, were etched in high density Cl-2/Ar plasmas either with or without concurrent ultraviolet (UV) illumination. Under optimized conditions, etch rate enhancement up to a factor of 5 was obtained for NiFeCo, TaN, and CrSi with UV illumination; whereas the etch rate of NiFe was retarded. Post-etch cleaning with H-2 or SF6 plasmas or H2O rinsing was necessary in all cases in order to prevent corrosion of the metal layers from chlorinated etch residues. (C) 2000 American Institute of Physics. [S0021-8979(00)43708-4].
引用
收藏
页码：6397 / 6399
页数：3
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