Tuning from thermionic emission to ohmic tunnel contacts via doping in Schottky-barrier nanotube transistors

被引：54
|
作者：
Chen, Yung-Fu
Fuhrer, Michael S. [1 ]
机构：
[1] Univ Maryland, Dept Phys, College Pk, MD 20742 USA
[2] Univ Maryland, Ctr Superconduct Res, College Pk, MD 20742 USA
来源：
NANO LETTERS | 2006年 / 6卷 / 09期
关键词：
D O I：
10.1021/nl061379b
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Electrical power > 1 mW is dissipated in semiconducting single-walled carbon nanotube devices in a vacuum. After high-power treatment, devices exhibit lower on currents and intrinsic, ambipolar behavior with near-ideal thermionic emission from Schottky barriers of height one-half the band gap. Upon exposure to air, devices recover p-type behavior, with positive threshold and ohmic contacts. The air-exposed state cannot be explained by a change in contact work function but instead is due to doping of the nanotube.
引用
收藏
页码：2158 / 2162
页数：5
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