Interdiffusion between InAs quantum dots and GaAs matrices

被引：11
|
作者：
Haga, T [1 ]
Kataoka, M [1 ]
Matsumura, N [1 ]
Muto, S [1 ]
Nakata, Y [1 ]
Yokoyama, N [1 ]
机构：
[1] FUJITSU LABS LTD, ATSUGI, KANAGAWA 24301, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 8B期
关键词：
quantum dots; InAs; interdiffusion; Rutherford backscattering; ion channeling;
D O I：
10.1143/JJAP.36.L1113
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The existence of interdiffusion between self-assembled lnAs quantum dots and a GaAs substrate has been investigated using ordinary Rutherford backscattering which is also useful for determining the value of the average InAs layer thickness. As a result, evidence for the diffusion of Ga atoms into the dot is obtained. Furthermore, spatial distribution of the disused Ga atoms in InAs dots is suggested.
引用
收藏
页码：L1113 / L1115
页数：3
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