A 3-33 GHz PHEMT MMIC distributed drain mixer

被引:22
|
作者
Deng, KL [1 ]
Wang, H [1 ]
机构
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
关键词
D O I
10.1109/RFIC.2002.1011944
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A compact wide-band GaAs PHEMT MMIC distributed drain mixer covering the RF frequency from 3 to 33 GHz is reported in this paper. The measured results show that the conversion loss of the distributed drain mixer is better than 4 dB over the frequency range at LO power 13 dBm without IF amplification. Using the matching circuit in the output of the FETs, the LO-to-IF and LO-to-RF isolations are better than 19 dB from 3 to 33 GHz. This mixer utilized a simple distributed topology with single-gate HEMTs and achieved a very broad band performance comparable to the cascode or dual-gate distributed mixers. The overall chip size of this MMIC is only 1.7 x 1 mm(2).
引用
收藏
页码:151 / 154
页数:4
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