A G-band (140-220 GHz) Microstrip MMIC Mixer operating in both Resistive and Drain-Pumped Mode

被引:0
|
作者
Gunnarsson, Sten E. [1 ]
Wadefalk, Niklas [1 ]
Angelov, Iltcho [1 ]
Zirath, Herbert [1 ,2 ]
Kallfass, Ingmar [3 ]
Leuther, Amulf [3 ]
机构
[1] Chalmers Univ Technol, Microwave Elect Lab, MC2, S-41296 Gothenburg, Sweden
[2] Ericsson AB, MHSERC, Molndal, Sweden
[3] Fraunhofer Inst Appl Solid State Phys, Freiburg, Germany
关键词
Drain mixer; G-band; GaAs; mHEMT; microstrip; MMIC; resistive mixer;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the design and characterization of a G-band microstrip single-ended MMIC mixer in a 0.1 mu m GaAs mHEMT technology. The mixer is measured in both resistive and drain-pumped mode of operation and a comparison between the two mixer topologies is made. Conversion loss versus RF and IF frequencies as well as loss versus applied LO power are presented in the 180 to 230 GHz band. The RF and IF 3-dB bandwidths are both limited by the measurement setup rather than the mixer itself and measures >30 GRz and >50 GHz, respectively. Both the bandwidths and frequency of operation are state-of-the-art for a MMIC mixer, regardless of technology. Applications include e.g. wireless transfer of very high data rates (>10 Gbps) and broadband radiometer front-ends covering several interesting frequency bands.
引用
收藏
页码:406 / +
页数:2
相关论文
共 16 条
  • [1] A 220 GHz (G-Band) microstrip MMIC single-ended resistive mixer
    Gunnarsson, Sten E.
    Wadefalk, Niklas
    Angelov, Tcho
    Zirath, Herbert
    Kallfass, Inginar
    Letither, Arnulf
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2008, 18 (03) : 215 - 217
  • [2] InPHEMT amplifier development for G-band (140-220 GHz) applications
    Lai, R
    Barsky, M
    Grundbacher, R
    Liu, PH
    Chin, TP
    Nishimoto, M
    Elmajarian, R
    Rodriguez, R
    Tran, L
    Gutierrez, A
    Oki, A
    Streit, D
    INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, : 175 - 177
  • [3] Multi-stage G-band (140-220 GHz) InPHBT amplifiers
    Urteaga, M
    Scott, D
    Krishnan, S
    Wei, Y
    Dahlström, M
    Griffith, Z
    Parthasarathy, N
    Rodwell, M
    GAAS IC SYMPOSIUM - 24TH ANNUAL, TECHNICAL DIGEST 2002, 2002, : 44 - 47
  • [4] Non-Contact Device and Integrated Circuit Characterization in the G-Band (140-220 GHz)
    Caglayan, Cosan
    Trichopoulos, Georgios C.
    Sertel, Kubilay
    2014 IEEE ANTENNAS AND PROPAGATION SOCIETY INTERNATIONAL SYMPOSIUM (APSURSI), 2014, : 295 - 296
  • [5] A G-Band (140-220 GHz) Planar Stubbed Branch-Line Balun in BCB technology
    Carpenter, Sona
    Abbasi, Morteza
    Karandikar, Yogesh
    Nilsson, Per-Ake
    Zirath, Herbert
    2013 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC 2013), 2013, : 273 - 275
  • [6] Direct Chip-to-Waveguide Transition Realized With Wire Bonding for 140-220 GHz G-Band
    Staerke, Paul
    Carta, Corrado
    Ellinger, Frank
    IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, 2020, 10 (03) : 302 - 308
  • [7] G-band (140-220 GHz) and W-Band (75-110 GHz) InP DHBT medium power amplifiers
    Paidi, VK
    Griffith, Z
    Wei, Y
    Dahlstrom, M
    Urteaga, M
    Parthasarathy, N
    Seo, M
    Samoska, L
    Fung, A
    Rodwell, MJW
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2005, 53 (02) : 598 - 605
  • [8] Characterisation of dielectric materials at G-band (140-220 GHz) using a guided free-space technique
    Shu, Minjie
    Shang, Xiaobang
    Ridler, Nick
    Naftaly, Mira
    Guo, Cheng
    Zhang, Anxue
    2022 52ND EUROPEAN MICROWAVE CONFERENCE (EUMC), 2022, : 107 - 110
  • [9] 30-40-GHz drain-pumped passive-mixer MMIC fabricated on VLSI SOICMOS technology
    Ellinger, F
    Rodoni, LC
    Sialm, G
    Kromer, C
    von Büren, G
    Schmatz, ML
    Menolfi, C
    Toifl, T
    Morf, T
    Kossel, M
    Jäckel, H
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2004, 52 (05) : 1382 - 1391
  • [10] Oscillation-Starting Conditions for Oversized G-Band (140-220 GHz) Backward Wave Oscillator Driven by Weakly Relativistic Electron Beam
    Gong, Shaoyan
    Ogura, Kazuo
    Nomizu, Shintaro
    Shirai, Akihiro
    Yamazaki, Kosuke
    Yambe, Kiyoyuki
    Kubo, Shin
    Shimozuma, Takashi
    Kobayashi, Sakuji
    Okada, Kohji
    IEEE TRANSACTIONS ON PLASMA SCIENCE, 2015, 43 (10) : 3530 - 3536