Defects in nonpolar (13(4)over-bar0) ZnO epitaxial film grown on (114) LaAlO3 substrate

被引：1

作者：

Yen, Tzu-Chun ^{[1
]}

Wang, Wei-Lin ^{[1
]}

Peng, Chun-Yen ^{[1
]}

Tian, Jr-Sheng ^{[1
]}

Ho, Yen-Teng ^{[1
]}

Chang, Li ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2014年 / 32卷 / 02期

关键词：

Aluminum compounds - Heterojunctions - Stacking faults - Dislocations (crystals) - II-VI semiconductors - Epitaxial growth - High resolution transmission electron microscopy - Zinc oxide;

D O I：

10.1116/1.4830275

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The defects in (13 (4) over bar0)ZnO epitaxial film grown on (114)LaAlO3 (LAO) have been systematically investigated by using transmission electron microscopy. At the ZnO/LAO interface, the Burgers vectors of misfit dislocations are identified to be 1/3[(1) over bar2 (1) over bar0] and 1/2[0001]. Threading dislocations with the Burgers vectors of 1/3 < 11 (2) over bar0 > and < 0001 > are distributed on the basal plane. In (13 (4) over bar0)ZnO film, the predominant planar defects are basal stacking faults (BSFs) with 1/6 < 20 (2) over bar3 > displacement vectors. The densities of dislocations and BSFs are about 3.8 x 10(10) cm(-2) and 3.1 x 10(5) cm(-1), respectively. (C) 2014 American Vacuum Society.

引用

页数：3

共 50 条

[31] Growth of Semipolar InN(10(1)over-bar3) on LaAlO3(112) Substrate
Chen, Wei-Chun
Tian, Jr-Sheng
Wang, Wei-Lin
Ho, Yen-Teng
Chang, Li
JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (04)
[32] Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates
Wagner, BP
Reitmeier, ZJ
Park, JS
Bachelor, D
Zakharov, DN
Liliental-Weber, Z
Davis, RF
JOURNAL OF CRYSTAL GROWTH, 2006, 290 (02) : 504 - 512
[33] Effects of Buffer Layer on Structural Properties of Nonpolar (11(2)over-bar0)-Plane GaN Film
Zhao, Jianguo
Suo, Boyan
Xu, Ru
Tao, Tao
Zhuang, Zhe
Liu, Bin
Zhang, Xiong
Chang, Jianhua
CRYSTALS, 2023, 13 (07)
[34] Cluster quantum-chemical MINDO/3 study of HCOOH interactions with nonpolar (10(1)over-bar0) surface of ZnO
Zhanpeisov, NU
Nakatsuji, H
Hada, M
Yoshimoto, M
JOURNAL OF MOLECULAR CATALYSIS A-CHEMICAL, 1997, 118 (01) : 69 - 77
[35] Structural and Optical Properties of Nonpolar (11(2)over-bar0) ZnO Films Grown by Plasma-Assisted Molecular-Beam Epitaxy
Liu, Fengjuan
Zhang, Rui
Hu, Zuofu
Sun, Jian
Huang, Haiqin
Li, Zhenjun
Zhao, Jianwei
Yin, Penggang
Guo, Lin
Zhang, Xiqing
Wang, Yongsheng
IEEE TRANSACTIONS ON PLASMA SCIENCE, 2011, 39 (02) : 700 - 703
[36] Epitaxial growth of semipolar InN(10(1)over-tilde3) on LaAlO3 substrate: Epitaxial relationship analysis
Chen, Wei-Chun
Kuo, Shou-Yi
Tian, Jr. -Sheng
Wang, Wei-Lin
Lai, Fang-I
Wu, Yue-Han
Chang, Li
JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (05)
[37] Electrical characterization of low defect density nonpolar (11(2)over-bar0) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)
Imer, Bilge
Haskell, Benjamin
Rajan, Siddharth
Keller, Stacia
Mishra, Umesh K.
Nakamura, Shuji
Speck, James S.
DenBaars, Steven P.
JOURNAL OF MATERIALS RESEARCH, 2008, 23 (02) : 551 - 555
[38] Epitaxial Growth of CaMnO3-y Films on LaAlO3 (112 over bar 0) by Pulsed Direct Current Reactive Magnetron Sputtering
Ekstrom, Erik
Elsukova, Anna
Grasland, Justine
Palisaitis, Justinas
Ramanath, Ganpati
Persson, Per O. A.
Paul, Biplap
Eriksson, Fredrik
le Febvrier, Arnaud
Eklund, Per
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2022, 16 (04):
[39] Photoluminescence study of ZnO nanorods epitaxially grown on sapphire (11(2)over-bar0) substrates
Zhang, BP
Binh, NT
Segawa, Y
Kashiwaba, Y
Haga, K
APPLIED PHYSICS LETTERS, 2004, 84 (04) : 586 - 588
[40] First Principle Calculation of Polar and Nonpolar Molecule Adsorption on ZnO (0001) and (10(1)over-bar0) Surface
Jin Zhulin
Xu Chunxiang
Yang Chi
Guo Jiyuan
Sheng Fengyu
Chen Xiaojie
NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2013, 5 (02) : 110 - 115

← 1 2 3 4 5 →