Defects in nonpolar (13(4)over-bar0) ZnO epitaxial film grown on (114) LaAlO3 substrate

被引：1
|
作者：
Yen, Tzu-Chun [1 ]
Wang, Wei-Lin [1 ]
Peng, Chun-Yen [1 ]
Tian, Jr-Sheng [1 ]
Ho, Yen-Teng [1 ]
Chang, Li [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2014年 / 32卷 / 02期
关键词：
Aluminum compounds - Heterojunctions - Stacking faults - Dislocations (crystals) - II-VI semiconductors - Epitaxial growth - High resolution transmission electron microscopy - Zinc oxide;
D O I：
10.1116/1.4830275
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The defects in (13 (4) over bar0)ZnO epitaxial film grown on (114)LaAlO3 (LAO) have been systematically investigated by using transmission electron microscopy. At the ZnO/LAO interface, the Burgers vectors of misfit dislocations are identified to be 1/3[(1) over bar2 (1) over bar0] and 1/2[0001]. Threading dislocations with the Burgers vectors of 1/3 < 11 (2) over bar0 > and < 0001 > are distributed on the basal plane. In (13 (4) over bar0)ZnO film, the predominant planar defects are basal stacking faults (BSFs) with 1/6 < 20 (2) over bar3 > displacement vectors. The densities of dislocations and BSFs are about 3.8 x 10(10) cm(-2) and 3.1 x 10(5) cm(-1), respectively. (C) 2014 American Vacuum Society.
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页数：3
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