1.3μm InGaAsP/InP semiconductor optical amplifier compatible with an active/passive integration technology

被引：0
|
作者：
Hazan, Joel [1 ]
Andreou, Stefanos [2 ]
Pustakhod, Dzmitry [1 ]
Kleijn, Steven [2 ]
Williams, Kevin [1 ]
Bente, Erwin [1 ]
机构：
[1] Eindhoven Univ Technol, IPI Photon Integrat Res Inst, NL-5600 MB Eindhoven, Netherlands
[2] Smart Photon, High Tech Campus 29, NL-5656 AE Eindhoven, Netherlands
来源：
27TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2021) | 2021年
基金：
荷兰研究理事会;
关键词：
GAIN;
D O I：
10.1109/ISLC51662.2021.9615686
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present our latest results on 1300 nm band optical amplifiers and Fabry-Perot lasers in the development of a 1300nm active\passive photonic integration platform on InP. Modal gain, material transparency, temperature dependence are reported and analyzed for amplifiers that are optimized for low butt-joint reflections.
引用
收藏
页数：2
相关论文
共 50 条
  • [1] 1300 nm Semiconductor Optical Amplifier Compatible With an InP Monolithic Active/Passive Integration Technology
    Hazan, Joel
    Andreou, Stefanos
    Pustakhod, Dzmitry
    Kleijn, Steven
    Williams, Kevin A.
    Bente, Erwin A. J. M.
    IEEE PHOTONICS JOURNAL, 2022, 14 (03):
  • [2] Characterization of an Asymmetric InGaAsP/InP Multi Quantum Well Semiconductor Optical Amplifier
    Nkanta, Julie E.
    Maldonado-Basilio, Ramon
    Benhsaien, Abdessamad
    Khan, Kaisar
    Abdul-Majid, Sawsan
    Zhang, Jessica
    Hall, Trevor J.
    PHOTONICS NORTH 2013, 2013, 8915
  • [3] Picosecond optical switching of a 1.5 μm active birefringent optical fiber loop filter using 1.3 μm control optical pulses and a 1.3 μm semiconductor optical amplifier
    Noriaki Onodera
    Kenichiro Tsuji
    Masaki Oiwa
    Syunsuke Minami
    Masatoshi Saruwatari
    Optical Review, 2009, 16 : 22 - 25
  • [4] Picosecond optical switching of a 1.5 μm active birefringent optical fiber loop filter using 1.3 μm control optical pulses and a 1.3 μm semiconductor optical amplifier
    Onodera, Noriaki
    Tsuji, Kenichiro
    Oiwa, Masaki
    Minami, Syunsuke
    Saruwatari, Masatoshi
    OPTICAL REVIEW, 2009, 16 (01) : 22 - 25
  • [5] Optical mode converter integration with InP-InGaAsP active and passive waveguides using a single regrowth process
    Yan, YJ
    Masanovic, ML
    Skogen, EJ
    Hu, Z
    Blumenthal, DJ
    Coldren, LA
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (09) : 1249 - 1251
  • [6] Intrinsic temperature sensitivities of 1.3 μm GaInNAs/GaAs, InGaAsP/InP and AlGaInAs/InP-based semiconductor lasers
    Sweeney, SJ
    Fehse, R
    Adams, AR
    Riechert, H
    2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2003, : 39 - 40
  • [7] Short polarization converter optimized for active-passive integration in InGaAsP-InP
    Augustin, L. A.
    van der Tol, J. J. G. M.
    Geluk, E. J.
    Smit, M. K.
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 19 (17-20) : 1673 - 1675
  • [8] Short polarization converter optimized for active-passive integration in InGaAsP-InP
    COBRA Research Institute, Eindhoven University of Technology, Eindhoven 5612 AZ, Netherlands
    IEEE Photonics Technology Letters, 2007, 19 (20) : 1673 - 1675
  • [9] 1.3 μm traveling-wave GaInNAs semiconductor optical amplifier
    Hashimoto, J
    Koyama, K
    Katsuyama, T
    Iguchi, Y
    Yamada, T
    Takagishi, S
    Ito, M
    Ishida, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (6A): : 3419 - 3423
  • [10] 1.3 μm traveling-wave GaInNAs semiconductor optical amplifier
    Hashimoto, J.-I., 1600, Japan Society of Applied Physics (43):
12345