High temperature (Ga)InAsP high band gap GaInAsP barriers 1.3 mu m SL-MQW lasers grown by gas source MBE

被引：7

作者：

PagnodRossiaux, P

Gaborit, F

Tscherptner, N

Roux, L

Starck, C

Fernier, B

机构：

[1] Alcatel-Alsthom Recherche, Route de Nozay

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 175卷

关键词：

1.3 mu m lasers; strain-compensated multi-quantum wells; characteristic temperature;

D O I：

10.1016/S0022-0248(96)00953-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on an experimental investigation of the temperature sensitivity of (Ga)InAsP compressively strained multi-quantum well (MQN) 1.3 mu m broad area lasers with respect to the amount of strain and barrier band gap. The composition of wells are adjusted to let the strains range from 0.6 % to 1.4%. whereas barrier band gap scales from 1.13 to 1.3 eV. Threshold current densities per well for infinite length as low as 60 to 135 A cm(-2) at 20 degrees C asses for the high quality of the structures grown by gas source MBE. Characteristic temperatures of 80 to 110 K, depending on the barrier band gap, are measured between 20 degrees C and 80 degrees C for 1200 mu m long devices.

引用

页码：948 / 954

页数：7

共 40 条

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Yiu Chung, Hin
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Journal of Crystal Growth, 1999, 201 : 909 - 913
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IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (10) : 1299 - 1301
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ELECTRONICS LETTERS, 1995, 31 (08) : 644 - 645
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IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (09) : 963 - 965
[35] VERY HIGH CHARACTERISTIC TEMPERATURE AND CONSTANT DIFFERENTIAL QUANTUM EFFICIENCY 1.3-MU-M GAINASP/INP STRAINED-LAYER QUANTUM-WELL LASERS BY USE OF TEMPERATURE-DEPENDENT REFLECTIVITY (TDR) MIRROR
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ELECTRONICS LETTERS, 1994, 30 (13) : 1064 - 1065
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ELECTRONICS LETTERS, 1995, 31 (10) : 803 - 805
[37] VERY HIGH CHARACTERISTIC TEMPERATURE AND CONSTANT DIFFERENTIAL QUANTUM EFFICIENCY 1.3-MU-M GAINASP-INP STRAINED-LAYER QUANTUM-WELL LASERS BY USE OF TEMPERATURE-DEPENDENT REFLECTIVITY (TDR) MIRROR
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IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (02) : 293 - 300
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (2B): : L227 - L229
[39] High-power high-efficiency 0.98-mu m wavelength InGaAs-(In)GaAs(P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy
Gokhale, MR
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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (12) : 2266 - 2276
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