High temperature (Ga)InAsP high band gap GaInAsP barriers 1.3 mu m SL-MQW lasers grown by gas source MBE

We report on an experimental investigation of the temperature sensitivity of (Ga)InAsP compressively strained multi-quantum well (MQN) 1.3 mu m broad area lasers with respect to the amount of strain and barrier band gap. The composition of wells are adjusted to let the strains range from 0.6 % to 1.4%. whereas barrier band gap scales from 1.13 to 1.3 eV. Threshold current densities per well for infinite length as low as 60 to 135 A cm(-2) at 20 degrees C asses for the high quality of the structures grown by gas source MBE. Characteristic temperatures of 80 to 110 K, depending on the barrier band gap, are measured between 20 degrees C and 80 degrees C for 1200 mu m long devices.