Leakage current analysis of a real world silicon-silicon dioxide capacitance

被引：0

作者：

Schwaha, P. ^{[1
]}

Heinzl, R. ^{[1
]}

Brezna, W. ^{[2
]}

Smoliner, J. ^{[2
]}

Enichlmair, H. ^{[3
]}

Minixhofer, R. ^{[3
]}

Grasser, T. ^{[1
]}

机构：

[1] Vienna Univ Technol, IUE, CDL, Gusshausstr 27-29, A-1040 Vienna, Austria

[2] Vienna Univ Technol, FKE, A-1040 Vienna, Austria

[3] Schloss Premstatten, Ustriamicrosyst AG, A-8141 Unterpremstatten, Austria

来源：

PROCEEDINGS OF THE 6TH INTERNATIONAL CARIBBEAN CONFERENCE ON DEVICES, CIRCUITS, AND SYSTEMS | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown that surface roughness becomes increasingly important as oxide thicknesses decrease. Silicon-silicon dioxide capacitances with thicknesses of 7 nm, 15 nm, and 50 nm are measured with an atomic force microscope (AFM). The height data thusly obtained is used to create three dimensional simulation structures to reproduce measurement data obtained from leakage current measurements. The leakage currents are simulated using the Fowler-Nordheim (FN) tunnelling current model.

引用

页码：365 / +

页数：2

共 50 条

[21] A STUDY OF OXIDE TRAPS AND INTERFACE STATES OF THE SILICON-SILICON DIOXIDE INTERFACE
STIVERS, AR
SAH, CT
JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6292 - 6304
[22] EFFECT OF O+ IMPLANTATION ON SILICON-SILICON DIOXIDE INTERFACE PROPERTIES
SPROUL, ME
NASSIBIAN, AG
SOLID-STATE ELECTRONICS, 1974, 17 (06) : 577 - 582
[23] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
BERGLUND, CN
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +
[24] Unravelling the silicon-silicon dioxide interface under different operating conditions
Nie, Shuai
Bonilla, Ruy Sebastian
Hameiri, Ziv
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2021, 224
[25] EFFECTS OF ION-IMPLANTATION ON CHARGES IN SILICON-SILICON DIOXIDE SYSTEM
LEARN, AJ
HESS, DW
JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) : 308 - 312
[26] SURFACE STATES OF SILICON-SILICON DIOXIDE INTERFACE GROWN BY VAPOR DEPOSITION
TARUI, Y
KOMIYA, Y
TESHIMA, H
NAGAI, K
JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (04) : 275 - &
[27] LASER-SCANNING PHOTOEMISSION MEASUREMENTS OF SILICON-SILICON DIOXIDE INTERFACE
WILLIAMS, R
WOODS, MH
JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) : 4142 - +
[28] EFFECT OF ORIENTATION ON SURFACE CHARGE DENSITY AT SILICON-SILICON DIOXIDE INTERFACE
MIURA, Y
JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (12) : 958 - &
[29] SURFACE STATES AND BUILT-IN CHARGE IN SILICON-SILICON DIOXIDE SYSTEM
URITSKII, VY
KONOROV, PP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (08): : 1055 - 1056
[30] DETERMINATION OF ALUMINUM-SILICON DIOXIDE AND SILICON-SILICON DIOXIDE BARRIER HEIGHTS IN A METAL-TUNNEL INSULATOR-SILICON SYSTEM
DUONG, AK
NASSIBIAN, AG
JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) : 1256 - 1260

← 1 2 3 4 5 →