The Growth of InAsxSb1-x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy

The effect of a substrate misorientation degree from a singular face on the composition and morphology of layers of InAsxSb1 -x solid solutions obtained by molecular-beam epitaxy on a GaAs surface has been investigated. The substrates of GaAs wafers with the orientation (100) misoriented in the direction [110] by 0 degrees, 1 degrees, 2 degrees, and 5 degrees are used. The heterostructures are grown at temperatures of 310 degrees C and 380 degrees C (respectively, the lower and upper boundaries of the temperature range in which structurally perfect InAsxSb1 -x films form). The effect of the molecular form of arsenic (As-2 or As-4) on the composition of the layers is studied. The composition and structural properties are investigated using high-resolution X-ray diffractometry (HRXRD) and atomic-force microscopy (AFM). It is established that, in the series of misorientation angles 0 degrees 5 degrees, the arsenic fraction x increases consecutively when using fluxes of both As-2 and As-4 molecules. With the As-2 molecular flux, the fraction x increases only a little (1.05 times) with increasing degree of misorientation, while, when using the As-4 flux, the increase in x is 1.75 times. An increase in the growth temperature leads to growth in the arsenic fraction in the solid solution. The surface morphology improves with an increasing degree of misorientation at a low growth temperature and degrades at a high temperature.