Single-mode operation of optically pumped membrane buried heterostructure distributed-feedback lasers

被引：2

作者：

Okamoto, T ^{[1
]}

Nunoya, N ^{[1
]}

Onodera, Y ^{[1
]}

Tamura, S ^{[1
]}

Arai, S ^{[1
]}

机构：

[1] Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Meguro Ku, Tokyo 1528552, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2002年 / 41卷 / 3A期

关键词：

DFB laser; membrane; benzocyclobutene; GaInAsP/InF; CH4/H-2-RIE; OMVPE regrowth;

D O I：

10.1143/JJAP.41.L249

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

1.5 mum-wavelength GaInAsP/InP membrane buried heterostructure distributed-feedback laser consisting of deeply, etched single-quantum-well wire-like active regions was realized using low damage CH4/H-2 reactive ion etching and embedding growth by the organo-metallic vapor phase epitaxy technique. A threshold pump power of 40 mW and a sub-mode suppression-ratio of 36 dB were obtained for a 142 nm-thick semiconductor membrane core layer with a cavity length of 120 mum and a stripe width of 2 mum under room-temperature continuous wave optical pumping by a 970 nm wavelength laser diode.

引用

页码：L249 / L251

页数：3

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