Unselective regrowth of 1.5-μm InGaAsP multiple-quantum-well distributed-feedback buried heterostructure lasers

被引：0
|
作者：
Feng, W.
Ding, Y.
Pan, J. Q.
Zhao, L. J.
Zhu, H. L.
Wang, W.
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
[2] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan
来源：
OPTICAL ENGINEERING | 2006年 / 45卷 / 09期
关键词：
buried heterostructure; regrowth; multiple quantum well; distributed feed back; laser;
D O I：
10.1117/1.2355658
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Unselective regrowth for fabricating 1.5-mu m InGaAsP multiple-quantum well (MQW) distributed-feedback (DFB) buried heterostructure (BH) lasers is developed. The experimental results exhibit superior characteristics, such as a low threshold of 8.5 mA, high slope efficiency of 0.55 mW/mA, circular-like far-field patterns, the narrow line-width of 2.5 MHz, etc. The high performance of the devices effectively proves the feasibility of the new method to fabricate buried heterostructure lasers. (c) 2006 Society of Photo-Optical Instrumentation Engineers.
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页数：3
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