Low-temperature synthesis and photoluminescence of AlN

被引：70
|
作者：
Lan, YC [1 ]
Chen, XL
Cao, YG
Xu, YP
Xun, LD
Xu, T
Liang, JK
机构：
[1] Chinese Acad Sci, Inst Phys, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
[2] Peking Univ, State Key Lab Chem & Applicat Rare Earth Mat, Beijing 100080, Peoples R China
[3] Acad Sinica, Int Ctr Mat Phys, Shenyang 110015, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 1999年 / 207卷 / 03期
基金：
中国国家自然科学基金;
关键词：
wurtzite AlN; synthesis; PL spectrum;
D O I：
10.1016/S0022-0248(99)00448-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
High-quality aluminum nitride powder was obtained through the reaction of aluminum metal with ammonia at 450 degrees C in an autoclave. The synthesized powder was characterized by X-ray powder diffraction, high-resolution transmission electron microscopy (HRTEM) and photoluminescence spectrum. X-ray diffraction and HRTEM indicated that the powder consisted of wurtzite AIN with an average size of about 32 nm. Photoluminescence spectrum confirmed the existence of a blue luminescence band in AIN due to nitrogen vacancies. A possible low-temperature synthesis mechanism was discussed. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：247 / 250
页数：4
相关论文
共 50 条
  • [41] LOW-TEMPERATURE PHOTOLUMINESCENCE OF NACL-NI CRYSTALS
    REBANE, LA
    POLAK, K
    BOHUN, A
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1975, B 25 (04) : 479 - 482
  • [42] EFFECT OF THALLIUM ON ZNSE LOW-TEMPERATURE EDGE PHOTOLUMINESCENCE
    BOLBOSHENKO, VZ
    IVANOVA, GN
    KADAN, VN
    MATSKO, MG
    NEDEOGLO, DD
    OPTIKA I SPEKTROSKOPIYA, 1990, 69 (06): : 1318 - 1322
  • [43] LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRUM OF AMORPHOUS-SEMICONDUCTORS
    PICKIN, W
    PHYSICAL REVIEW B, 1989, 40 (17): : 12030 - 12033
  • [44] Low-temperature photoluminescence in holmium-doped silicon
    B. A. Andreev
    N. A. Sobolev
    Yu. A. Nikolaev
    D. I. Kuritsin
    M. I. Makovijchuk
    E. O. Parshin
    Semiconductors, 1999, 33 : 407 - 409
  • [45] Low-temperature growth and photoluminescence property of ZnS nanoribbons
    Zhang, ZX
    Wang, JX
    Yuan, HJ
    Gao, Y
    Liu, DF
    Song, L
    Xiang, YJ
    Zhao, XW
    Liu, LF
    Luo, SD
    Dou, XY
    Mou, SC
    Zhou, WY
    Xie, SS
    JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (39): : 18352 - 18355
  • [46] Low-temperature photoluminescence in germanium irradiated by fast neutrons
    O. P. Ermolaev
    Journal of Applied Spectroscopy, 1997, 64 (4) : 493 - 496
  • [47] Low-temperature photoluminescence of CoO excited by synchrotron radiation
    V. I. Sokolov
    V. A. Pustovarov
    N. B. Gruzdev
    P. S. Sokolov
    A. N. Baranov
    Optics and Spectroscopy, 2014, 116 : 790 - 792
  • [48] Low-temperature photoluminescence study of ZnO:Ni nanowires
    Jiang, Feihong
    Zhang, Jun
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2017, 123 (08):
  • [49] LOW-TEMPERATURE FATIGUE OF PHOTOLUMINESCENCE IN AGED POROUS SILICON
    GRIVICKAS, V
    LINNROS, J
    TELLEFSEN, JA
    THIN SOLID FILMS, 1995, 255 (1-2) : 208 - 211
  • [50] Low-temperature photoluminescence in SiGe single quantum wells
    S. Kalem
    T. Curtis
    W.B. de Boer
    G.E. Stillman
    Applied Physics A, 1998, 66 : 23 - 28
12345