Low-temperature photoluminescence in SiGe single quantum wells

被引：0

作者：

S. Kalem

T. Curtis

W.B. de Boer

G.E. Stillman

机构：

[1] TUBITAK,

[2] Marmara Research Center,undefined

[3] Institute of Electronics,undefined

[4] P.O. Box 21,undefined

[5] Gebze,undefined

[6] TR-41470 Kocaeli,undefined

[7] Turkey (Fax: 90-262/641-2309,undefined

[8] E-mail: kalem@mam.gov.tr),undefined

[9] University of Illinois at Urbana-Champaign,undefined

[10] Center for Compound Semiconductor Microelectronics,undefined

[11] Department of Electronics and Computer Engineering,undefined

[12] Urbana,undefined

[13] Illinois 61801,undefined

[14] USA (Fax: +1-217/244-6375,undefined

[15] E-mail: gstill@ux1.cso.uiuc.edu),undefined

[16] Philips Research,undefined

[17] Prof. Holstlaan 4,undefined

[18] 5656 AA Eindhoven,undefined

[19] The Netherlands (Fax: +31-40/274-3390,undefined

[20] E-mail:deboer@prl.philips.nl),undefined

来源：

Applied Physics A | 1998年 / 66卷

关键词：

PACS: 68.55; 68.65; 78.65; 81.5;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Gex single quantum wells (x=0.19) grown by rapid thermal chemical vapor deposition at 625 °C. A well-resolved strong excitonic luminescence with TO-phonon and no-phonon transitions with a full width at half-maximum as low as 6 meV is observed for a quantum well of 98 Å. The photoluminescence emission shows a significant blue shift and a broadening with excitation intensity. The results are analysed in terms of localization of photoinduced charge carriers at the heterointerfaces.

引用

页码：23 / 28

页数：5

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