Defect-induced color-tunable monolithic GaN-based light-emitting diodes

被引：12

作者：

Huang, Yaping ^{[1
,2
,3
]}

Yun, Feng ^{[1
,2
,3
]}

Li, Yufeng ^{[1
,2
,3
]}

Ding, Wen ^{[1
,2
,3
]}

Wang, Yue ^{[3
]}

Wang, Hong ^{[3
]}

Zhang, Weihan ^{[3
]}

Zhang, Ye ^{[3
]}

Guo, Maofeng ^{[3
]}

Liu, Shuo ^{[4
]}

Hou, Xun ^{[1
,2
,3
]}

机构：

[1] Xi An Jiao Tong Univ, Key Lab Phys Elect & Devices, Minist Educ, Xian 710049, Shaanxi, Peoples R China

[2] Xi An Jiao Tong Univ, Shaanxi Prov Key Lab Photon & Informat Technol, Xian 710049, Shaanxi, Peoples R China

[3] Xi An Jiao Tong Univ, Solid State Lighting Engn Res Ctr, Xian 710049, Shaanxi, Peoples R China

[4] Shaanxi Supernova Lighting Technol Co Ltd, Xian 710077, Shaanxi, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 10期

基金：

国家高技术研究发展计划(863计划);

关键词：

CONTACTS; ORIGIN;

D O I：

10.7567/APEX.7.102102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated defect-induced color-tunable monolithic GaN-based vertical light-emitting diodes (VLEDs). With Ag nanorod arrays embedded in p-GaN, large numbers of Ga vacancies (V-Ga) were produced during the thermal bonding process in VLED fabrication. V-Ga-related donor acceptor pair (DAP) transitions in p-GaN resulted in red emission in photoluminescence (PL) measurements as well as a broad electroluminescence (EL) emission spectrum extending from green to red. In combination with high-emission-efficiency blue InGaN/GaN multiple quantum wells (MQWs), the emission color of VLEDs can be changed from red to white by increasing the injection current. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

共 50 条

[1] Color temperature tunable white light based on monolithic color-tunable light emitting diodes
El-Ghoroury, Hussein S.
Nakajima, Yoshitake
Yeh, Milton
Liang, Evan
Chuang, Chih-Li
Chen, J. C.
OPTICS EXPRESS, 2020, 28 (02) : 1206 - 1215
[2] Phosphor-Free, Color-Tunable Monolithic InGaN Light-Emitting Diodes
Li, Hongjian
Li, Panpan
Kang, Junjie
Li, Zhi
Li, Zhicong
Li, Jing
Yi, Xiaoyan
Wang, Guohong
APPLIED PHYSICS EXPRESS, 2013, 6 (10)
[3] Monolithic integration of GaN-based phototransistors and light-emitting diodes
Yeh, Pinghui S.
Chiu, Yu-Chieh
Wu, Tsung-Che
Chen, Yan-Xiang
Wang, Tzu-Hsun
Chou, Tzu-Chieh
OPTICS EXPRESS, 2019, 27 (21) : 29854 - 29862
[4] Color-tunable multilayer light-emitting diodes based on conjugated polymers
Huang, CC
Meng, HF
Ho, GK
Chen, CH
Hsu, CS
Huang, JH
Horng, SF
Chen, BX
Chen, LC
APPLIED PHYSICS LETTERS, 2004, 84 (07) : 1195 - 1197
[5] Surface Structure-Controlled Monolithic Multiple Color Semipolar GaN-based Light-Emitting Diodes
Lee, Gun-Woo
Oh, Jae-Hyeok
Lee, Sung-Nam
APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY, 2022, 31 (02): : 56 - 59
[6] Hybrid Color-Tunable Polymer Light-Emitting Diodes Using Electrospraying
Guo, Xiaohang
Benavides-Guerrero, Jaime
Banerjee, Debika
Roy-Moisan, Francois
Cloutier, Sylvain G.
ACS OMEGA, 2019, 4 (21): : 19287 - 19292
[7] Color-Tunable Polymer Light-Emitting Diodes with Conjugated Polymer Homojunctions
Huang, Chun-Yuan
Su, Yan-Kuin
Cheng, Chiao-Yang
Rao, M. V. Madhava
Chen, Ying-Chih
Huang, Tsung-Syun
Wen, Ten-Chin
Guo, Tzung-Fang
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04)
[8] The design and fabrication of a GaN-based monolithic light-emitting diode arrayThe design and fabrication of a GaN-based monolithic light-emitting diode array
Zhan Teng
Zhang Yang
Li Jing
Ma Jun
Liu Zhiqiang
Yi Xiaoyan
Wang Guohong
Li Jinmin
JOURNAL OF SEMICONDUCTORS, 2013, 34 (09)
[9] The fabrication of GaN-based nanopillar light-emitting diodes
Zhu, Jihong
Wang, Liangji
Zhang, Shuming
Wang, Hui
Zhao, Degang
Zhu, Jianjun
Liu, Zongshun
Jiang, Desheng
Yang, Hui
JOURNAL OF APPLIED PHYSICS, 2010, 108 (07)
[10] Brightness of blue GaN-based light-emitting diodes
Grushko, N. S.
Lakalin, A. V.
Solonin, A. P.
INORGANIC MATERIALS, 2008, 44 (02) : 139 - 141

← 1 2 3 4 5 →