Defect-induced color-tunable monolithic GaN-based light-emitting diodes

被引：12

作者：

Huang, Yaping ^{[1
,2
,3
]}

Yun, Feng ^{[1
,2
,3
]}

Li, Yufeng ^{[1
,2
,3
]}

Ding, Wen ^{[1
,2
,3
]}

Wang, Yue ^{[3
]}

Wang, Hong ^{[3
]}

Zhang, Weihan ^{[3
]}

Zhang, Ye ^{[3
]}

Guo, Maofeng ^{[3
]}

Liu, Shuo ^{[4
]}

Hou, Xun ^{[1
,2
,3
]}

机构：

[1] Xi An Jiao Tong Univ, Key Lab Phys Elect & Devices, Minist Educ, Xian 710049, Shaanxi, Peoples R China

[2] Xi An Jiao Tong Univ, Shaanxi Prov Key Lab Photon & Informat Technol, Xian 710049, Shaanxi, Peoples R China

[3] Xi An Jiao Tong Univ, Solid State Lighting Engn Res Ctr, Xian 710049, Shaanxi, Peoples R China

[4] Shaanxi Supernova Lighting Technol Co Ltd, Xian 710077, Shaanxi, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 10期

基金：

国家高技术研究发展计划(863计划);

关键词：

CONTACTS; ORIGIN;

D O I：

10.7567/APEX.7.102102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated defect-induced color-tunable monolithic GaN-based vertical light-emitting diodes (VLEDs). With Ag nanorod arrays embedded in p-GaN, large numbers of Ga vacancies (V-Ga) were produced during the thermal bonding process in VLED fabrication. V-Ga-related donor acceptor pair (DAP) transitions in p-GaN resulted in red emission in photoluminescence (PL) measurements as well as a broad electroluminescence (EL) emission spectrum extending from green to red. In combination with high-emission-efficiency blue InGaN/GaN multiple quantum wells (MQWs), the emission color of VLEDs can be changed from red to white by increasing the injection current. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

共 50 条

[11] Recent Progress in GaN-Based Light-Emitting Diodes
Jia, Haiqiang
Guo, Liwei
Wang, Wenxin
Chen, Hong
ADVANCED MATERIALS, 2009, 21 (45) : 4641 - 4646
[12] High brightness GaN-based light-emitting diodes
Lee, Ya-Ju
Lu, Tien-Chang
Kuo, Hao-Chung
Wang, Shing-Chung
JOURNAL OF DISPLAY TECHNOLOGY, 2007, 3 (02): : 118 - 125
[13] Status of GaN-based green light-emitting diodes
Liu Jun-Lin
Zhang Jian-Li
Wang Guang-Xu
Mo Chun-Lan
Xu Long-Quan
Ding Jie
Quan Zhi-Jue
Wang Xiao-Lan
Pan Shuan
Zheng Chang-Da
Wu Xiao-Ming
Fang Wen-Qing
Jiang Feng-Yi
CHINESE PHYSICS B, 2015, 24 (06)
[14] Status of GaN-based green light-emitting diodes
刘军林
张建立
王光绪
莫春兰
徐龙权
丁杰
全知觉
王小兰
潘拴
郑畅达
吴小明
方文卿
江风益
Chinese Physics B, 2015, 24 (06) : 43 - 50
[15] GaN-based light-emitting diodes suitable for white light
Mukai, T
Yamada, M
Mitani, T
Narukawa, Y
Shioji, S
Niki, I
Sonobe, SY
Izuno, K
Suenaga, R
LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS VII, 2003, 4996 : 156 - 165
[16] Maskless Fabrication of GaN-Based Light-Emitting Diodes
Guilhabert, B.
Richardson, E.
Massoubre, D.
Gu, E.
Watson, I. M.
Dawson, M. D.
2010 23RD ANNUAL MEETING OF THE IEEE PHOTONICS SOCIETY, 2010, : 649 - 650
[17] Brightness of blue GaN-based light-emitting diodes
N. S. Grushko
A. V. Lakalin
A. P. Solonin
Inorganic Materials, 2008, 44 : 139 - 141
[18] GaN-based light-emitting diodes on origami substrates
Jung, Younghun
Wang, Xiaotie
Kim, Jiwan
Kim, Sung Hyun
Ren, Fan
Pearton, Stephen J.
Kim, Jihyun
APPLIED PHYSICS LETTERS, 2012, 100 (23)
[19] Current spreading in GaN-based light-emitting diodes
李强
李虞锋
张敏妍
丁文
云峰
Chinese Physics B, 2016, 25 (11) : 428 - 433
[20] GaN-based light-emitting diodes with SiONx on sidewalls
Zhu, Yanxu
Xu, Chen
Da, Xiaoli
Niu, Nanhui
Han, Jun
Shen, Guangdi
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (06) : 659 - 662

← 1 2 3 4 5 →