MAGNETIC DOMAIN WALL MANIPULATION IN NANOSTRUCTURES OF (Ga,Mn)As

被引：0
|
作者：
Figielski, T. [1 ]
Wosinski, T. [1 ]
Andrearczyk, T. [1 ]
Makosa, A. [1 ]
Wrobel, J. [1 ]
Sadowski, J. [2 ]
机构：
[1] Polish Acad Sci, Inst Phys, Al Lotnikow 32-46, PL-02668 Warsaw, Poland
[2] Lund Univ, MAX Lab, 22100 Lund, Sweden
来源：
PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES | 2009年
关键词：
D O I：
10.1142/9789814280365_0062
中图分类号：
O69 [应用化学];
学科分类号：
081704 ;
摘要：
Some ideas and experimental results related to the effect of switching magnetic domain walls in three- and four-arm nanostructures, fabricated from ferromagnetic (GaMn)As layers, are presented. Changes in electrical resistance of those structures, accompanying switching, could be used in spintronic devices.
引用
收藏
页码：256 / +
页数：2
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