Domain-wall induced magneto-resistive memory in ferromagnetic (Ga, Mn) As nanostructures

被引：2

作者：

Wosinski, Tadeusz ^{[1
]}

Figielski, Tadeusz ^{[1
]}

Morawski, Andrzej ^{[1
]}

Makosa, Andrzej ^{[1
]}

Osinniy, Viktor ^{[1
]}

Wrobel, Jerzy ^{[1
]}

Sadowski, Janusz ^{[1
,2
]}

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[2] Lund Univ, Max Lab, S-22100 Lund, Sweden

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2008年 / 19卷 / Suppl 1期

关键词：

D O I：

10.1007/s10854-007-9516-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Novel magneto-resistive memory effect is demonstrated, which appears in lithographically patterned Y-shaped, three-terminal nanostructures, consisting of three nanowires joined in one point, formed in the epitaxial layer of a ferromagnetic (Ga, Mn) As semiconductor. The effect, in which the zero-field resistance of a pair of nanowires depends on the direction of the previously applied magnetic field, results from a rearrangement of magnetic domain walls, contributing an extra resistance, between different pairs of nanowires in the structure. Two-state behaviour of the nanostructure resistance provides its usefulness for applications in non-volatile memory devices.

引用

页码：S111 / S114

页数：4

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