Manipulating a domain wall in (Ga,Mn)As

被引：3
|
作者：
Holleitner, AW [1 ]
Knotz, H [1 ]
Myers, RC [1 ]
Gossard, AC [1 ]
Awschalom, DD [1 ]
机构：
[1] Univ Calif Santa Barbara, Ctr Spintron & Quantum Comp, Santa Barbara, CA 93106 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2005年 / 97卷 / 10期
关键词：
D O I：
10.1063/1.1849055
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
By using a focused beam of gallium ions, we define magnetization pinning lines in a ferromagnetic epilayer of (Ga,Mn)As. We are able to resolve the arrival of a domain wall at a pinning line through transport spectroscopy. This technique enables us to manipulate a pinned domain wall via the influence of an external magnetic field. Temperature dependent measurements elucidate the disappearance of these effects above the (Ga,Mn)As Curie temperature. (c) 2005 American Institute of Physics.
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页数：3
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