Localization induced by impurity doping in high-T-c superconductors

被引：0
|
作者：
Malozovsky, YM [1 ]
Fan, JD [1 ]
机构：
[1] A&M COLL,BATON ROUGE,LA 70813
来源：
PHYSICA C | 1997年 / 282卷
关键词：
D O I：
10.1016/S0921-4534(97)00987-8
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The localization in a disordered metal by means of the perturbation approach is considered. It is shown that in the case of a given impurity potential a small disorder leads to localization in 2D as well as in 1D, and causes the weak localization in 3D. In contrast, in the case of the screened impurity potential by electrons (interacting electrons) the disorder effect on polarizability can significantly be suppressed by the Coulomb vertex corrections to the bare impurity vertex as shown. The application of the results to 1D - 3D are discussed.
引用
收藏
页码：1727 / 1728
页数：2
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