A low-power low-voltage MOSFET-only voltage reference

被引:0
|
作者
Bedeschi, F [1 ]
Bonizzoni, E [1 ]
Fantini, A [1 ]
Resta, C [1 ]
Torelli, G [1 ]
机构
[1] STMicroelectronics, Memory Prod Grp R&D, I-20041 Agrate Brianza, Italy
关键词
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A low-power low-voltage MOSFET-only voltage reference featuring very good temperature stability and referred to the positive power supply is proposed. It compensates for the temperature dependence of a gate-to-source voltage of an MOS transistor working in the weak inversion region with a proportional-to-absolute-temperature voltage generated by a pair of MOS devices operating in the same region. The circuit, designed for a 0.35-mum (0.18-mum in the memory array) CMOS Flash memory technology, can operate with a supply voltage as low as 1 V and draws a current of 3 muA. The simulated variation of the reference voltage is within 0.2% over the range from -20 to 80 degreesC.
引用
收藏
页码:57 / 60
页数:4
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