A low-voltage, low-power voltage reference based on subthreshold MOSFETs

被引：1
|
作者：
Dong, Liangwei [1 ,2 ]
Hu, Yueli [1 ]
机构：
[1] Shanghai Univ, Sch Mechatron Engn & Automat, 149 YanChang Rd, Shanghai 200072, Peoples R China
[2] Changzhou Inst Technol, Sch Elect & Photoelect Engn, Changzhou 213000, Peoples R China
来源：
MODERN PHYSICS LETTERS B | 2017年 / 31卷 / 19-21期
关键词：
CMOS voltage reference; low voltage; low power; temperature compensation;
D O I：
10.1142/S0217984917400693
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A novel low-voltage low-power CMOS voltage reference independent of temperature is presented in this design. After considering the combined effect of (1) a perfect suppression of the temperature dependence of mobility; (2) the compensation of the channel length modulation effect on the temperature coefficient, a temperature coefficient of 10 ppm/degrees C is achieved. Moreover, by adopting the subthreshold MOSFETs, there are no resistors used in the proposed structure. Therefore, the maximum supply current measured at the maximum supply voltage is 70 nA and at 80 degrees C. The circuit can be used as a voltage reference for high performance and low power dissipation on a single chip.
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页数：7
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