Combining OPC and design for printability into 65nm logic designs

被引:4
|
作者
Lucas, K [1 ]
Yuan, CM [1 ]
Boone, R [1 ]
Strozewski, K [1 ]
Porter, J [1 ]
Tian, RQ [1 ]
Wimmer, K [1 ]
Cobb, J [1 ]
Wilkinson, B [1 ]
Toublan, O [1 ]
机构
[1] Motorola Inc, Semicond Prod Sector, F-38926 Crolles, France
关键词
optical proximity correction; OPC; lithography; design for manufacturability; DFM;
D O I
10.1117/12.537655
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The patterning of logic layouts for the 65nm and subsequent device generations will require the implementation of new capabilities in process control, optical proximity correction (OPC), resolution enhancement technique (RET) complexity, and lithography-design interactions. Many of the methods used to implement and verify these complex interactions can be described as design for manufacturability (DFM) techniques. In this paper we review a wide range of existing non-lithographic and lithographic DFM techniques in the semiconductor industry. We also analyze existing product designs for DFM technique implementation potential and propose new design methods for improving lithographic capability.
引用
收藏
页码:158 / 169
页数:12
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