Impact of carrier localization on radiative recombination times in semipolar (2021) plane InGaN/GaN quantum wells

被引：24

作者：

Ivanov, R. ^{[1
]}

Marcinkevicius, S. ^{[1
]}

Zhao, Y. ^{[2
]}

Becerra, D. L. ^{[2
]}

Nakamura, S. ^{[2
]}

DenBaars, S. P. ^{[2
]}

Speck, J. S. ^{[2
]}

机构：

[1] KTH Royal Inst Technol, Dept Mat & Nano Phys, S-16440 Kista, Sweden

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 21期

关键词：

LATERAL EPITAXIAL OVERGROWTH; EMISSION; GAN;

D O I：

10.1063/1.4936386

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Semipolar (20 (2) over bar1) plane In,Ga1-xN quantum wells (QWs) of varying alloy composition were studied by time-resolved photoluminescence. A large difference in effective radiative lifetimes. from sub-ns for x = 0.11 to similar to 30 ns for x approximate to 0.35 was found. This effect is attributed to different properties of carrier localization. In low In content QWs. recombination at extended states with short recombination times is prevalent. In QWs with a high In content, the lifetimes are increased by localization of electrons and holes at separate sites. The zigzag shape of the QW interfaces and the resulting in-plane electric field are proposed as the cause for the separate electron and hole localization. (C) 2015 AIP Publishing LLC.

引用

页数：5

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