Different behavior of semipolar and polar InGaN/GaN quantum wells: Pressure studies of photoluminescence

被引：3
|
作者：
Staszczak, G. [1 ]
Suski, T. [1 ]
Khachapuridze, A. [1 ]
Perlin, P. [2 ]
Funato, M. [2 ]
Kawakami, Y. [2 ]
机构：
[1] PAS, Inst High Pressure Phys UNIPRESS, PL-01142 Warsaw, Poland
[2] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2011年 / 208卷 / 07期
关键词：
indium segregation; internal electric field; nitride semiconductors; semipolar;
D O I：
10.1002/pssa.201000975
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Photoluminescence of (11-22) semipolar and (0001) polar InGaN/GaN quantum wells (QWs) was studied as a function of exciting laser intensity and hydrostatic pressure. A large photoluminescence energy shift with pressure (dE(PL)/dp) was observed in semipolar QWs comparing to polar ones. In addition, a negligible blue shift as a function of exciting laser intensity gives a strong argument for the absence of a built-in electric field in the studied semipolar structures. These results suggest that In segregation effects play an important role in semipolar QWs. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1526 / 1528
页数：3
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