Femtosecond pump-probe spectroscopy of intersubband relaxation dynamics in narrow InGaAs/AlAsSb quantum well structures

被引:21
|
作者
Tribuzy, C. V. -B.
Ohser, S.
Winnerl, S.
Grenzer, J.
Schneider, H.
Helm, M.
Neuhaus, J.
Dekorsy, T.
Biermann, K.
Kuenzel, H.
机构
[1] Forschungszentrum Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
[2] Univ Konstanz, Dept Phys, D-78457 Constance, Germany
[3] Univ Konstanz, Ctr Appl Photon, D-78457 Constance, Germany
[4] Heinrich Hertz Inst Nachrichtentech Berlin GmbH, Fraunhofer Inst Telecommun, D-10587 Berlin, Germany
关键词
D O I
10.1063/1.2360242
中图分类号
O59 [应用物理学];
学科分类号
摘要
Intersubband relaxation dynamics in InGaAs/AlAsSb multiquantum wells (QWs) is studied by single-color femtosecond pump-probe measurements. At early delay times, all samples show an exponential decay of the transient transmission occurring with time constants of the order of a picosecond. The relaxation dynamics at later delay times strongly depend on both QW thickness and doping location. A non-single-exponential decay behavior indicates extra competing relaxation channels, as further confirmed by solving three-level rate equations. It is shown that slowly decaying components are due to electron transfer to states related to indirect valleys in the wells or in the barriers. (c) 2006 American Institute of Physics.
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页数:3
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