Characteristics of CdS thin films deposited on glass and Cu(In,Ga) Se2 layer using chemical bath deposition

被引：14
|
作者：
Lee, Tea Young [1 ]
Lee, Il Hoon [1 ]
Jung, Sung Hee [1 ]
Chung, Chee Won [1 ]
机构：
[1] Inha Univ, Dept Chem Engn, Inchon 402751, South Korea
来源：
THIN SOLID FILMS | 2013年 / 548卷
基金：
新加坡国家研究基金会;
关键词：
Cadmium sulfide; Chemical bath deposition; Buffer layer; Copper indium gallium selinide; Solar cells; OPTICAL-PROPERTIES; TEMPERATURE; GROWTH;
D O I：
10.1016/j.tsf.2013.08.101
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The characteristics of CdS thin films deposited on glass and Cu(In,Ga) Se-2 (CIGS) thin films using a chemical bath deposition method were investigated. The concentration ratio of [S] to [Cd] in the solution and the deposition temperature were varied as key parameters. As the [S]/[Cd] ratio increased,the deposition rates decreased and grains of CdS formed as clusters. When the deposition temperature increased,the deposition rate increased and the grain size decreased,resulting in a circular grain shape. The [S]/[Cd] ratio and deposition temperature were found to have a great effect on the film stoichiometry,surface morphology and transmittance of CdS films. XPS analysis revealed that CdS films contained a significant amount of O,and the interdiffusion between the CdS and CIGS films took place. As the [S]/[Cd] ratio and deposition temperature increased,the CdS films showed good stoichiometry,smooth surface morphology and high transmittance. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：64 / 68
页数：5
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