Effect of deposition time on chemical bath deposited CdS thin films properties

被引:3
|
作者
Hariech, Sana [1 ]
Bougdira, Jamal [2 ]
Belmahi, Mohammed [2 ]
Medjahdi, Ghouti [2 ]
Aida, Mohamed Salah [3 ]
Zertal, Abdennour [1 ]
机构
[1] Freres Mentouri Univ Constantine 1, Fac Exact Sci, Lab Innovat Tech Preservat Environm, Constantine 25017, Algeria
[2] Univ Lorraine, Jean Lamour Inst, F-54500 Vandoeuvre Les Nancy, France
[3] King Abdulaziz Univ, Fac Sci, Dept Phys, Jeddah 21577, Saudi Arabia
关键词
Thin films; chemical bath; cadmium sulphide; structural properties; optical properties; photoluminescence; OPTICAL-PROPERTIES; OXIDATION; GROWTH; CBD;
D O I
10.1007/s12034-022-02661-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, cadmium sulphide (CdS) thin films are prepared by a simple and inexpensive chemical bath method. The effect of deposition time is investigated. The synthesized film's properties were characterized by X-ray diffraction (XRD), optical transmittance and photoluminescence. The XRD analysis reveals the formation of CdS with hexagonal or cubic phases. The crystallite size is deduced from the XRD analysis. We noticed that the crystallite size varies linearly as a function of the deposition time. Scanning electron microscopy images indicated that the CdS films are composed of spherical grains and the surfaces of these films become more homogeneous and dense with deposition time increase. The UV-visible transmittance spectra revealed that the films high-visible transmittance ranged between 60 and 80%. Furthermore, a significant increase in the optical bandgap value from 2.17 to 2.32 eV as a function of deposition time is noticed. The photoluminescence spectrum of each CdS film shows three emission peaks located at 537.32 nm (2.3 eV), 568.45 nm (2.18 eV) and 692.72 nm (1.79 eV) at room temperature, which may be attributed, respectively, to the transition from the valence band to the conduction band, excitonic transitions, i.e., DAP pairs recombination and DL-VB or CB-AL emissions. The excitonic transitions are predominantly due to the cadmium interstitials (I-Cd) or sulphur vacancies (V-S) defects present in these CdS films.
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页数:8
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