Charging control on high energy implanters: A process requirement demonstrated by plasma damage monitoring

被引：1
|
作者：
Cantin, C. [2 ]
Laviron, C. [3 ]
Gove, G. [1 ]
机构：
[1] NXP Semicond ICN 8, NL-6534 AE Nijmegen, Netherlands
[2] NXP Semicond, F-38926 Crolles, France
[3] CEA, LETI, F-38054 Grenoble 9, France
来源：
MICROELECTRONICS RELIABILITY | 2009年 / 49卷 / 02期
关键词：
D O I：
10.1016/j.microrel.2008.11.012
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Charging phenomena is one of the main problems faced in ion implantation. Anti-charging system such as plasma flood gun (PFG) are currently running on high current and medium current implanters to reduce potential charging damage on device structures. However, in a conventional production line, high energy implantation steps are still often used without any charge compensation technique. Faced with micro-arcing defects detected after Well implantation steps on production lots, we have clearly demonstrated that the defectivity issue was eradicated by enabling the PFG system on the VIISta3000 high energy implanter. In addition we have investigated charging as a function of PFG properties by plasma damage monitoring (PDM) and proved that voltages developed on oxidized wafers processed on the VIISta3000 were not insignificant. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码：209 / 214
页数：6
相关论文
共 50 条
  • [41] Process monitoring and control for high speed composites manufacturing
    Parnas, RS
    BROADER MEANING TO THERMOSETS, 1998, : 179 - 182
  • [42] Statistical Process Control based Energy Monitoring of Chemical Processes
    Kulcsar, Tibor
    Koncz, Peter
    Balaton, Miklos
    Nagy, Laszlo
    Abonyi, Janos
    24TH EUROPEAN SYMPOSIUM ON COMPUTER AIDED PROCESS ENGINEERING, PTS A AND B, 2014, 33 : 397 - 402
  • [43] Correlation between electron temperature uniformity and charging damage in high density plasma etching tool
    Tokashiki, K
    Noguchi, K
    Miyamoto, H
    Horiuchi, T
    1997 2ND INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, 1997, : 207 - 210
  • [44] Mechanism of charging damage during interlevel oxide deposition in high-density plasma tools
    Hwang, GS
    Giapis, KP
    1998 3RD INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, 1998, : 164 - 167
  • [45] Spectroscopic plasma monitoring deploying quality and process control to atmospheric pressure plasma applications
    Horn, K.
    Schütte, T.
    Struppert, T.
    Beier, O.
    Tölke, T.
    Eckardt, N.
    Schimanski, A.
    Grünler, B.
    Galvanotechnik, 2014, 105 (09): : 1900 - 1910
  • [46] Plasma charging damage on MOS devices with gate insulator of high-dielectric constant material
    Tzeng, PJ
    Chang, YY
    Chang-Liao, KS
    IEEE ELECTRON DEVICE LETTERS, 2001, 22 (11) : 527 - 529
  • [47] Monitoring plasma impedance match characteristics in a multipole inductively coupled plasma for process control
    Kim, B
    Lee, C
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (01): : 58 - 62
  • [48] On the recovery of simulated plasma process induced damage in high-κ dielectrics
    Pantisano, L.
    O'Sullivan, B. J.
    Roussel, P. J.
    Degraeve, R.
    Groeseneken, G.
    DeGendt, S.
    Heyns, M.
    2006 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2006, : 100 - +
  • [49] On the recovery of simulated plasma process induced damage in high-κ dielectrics
    O'Sullivan, B. J.
    Pantisano, L.
    Roussel, P.
    Degraeve, R.
    Groeseneken, G.
    DeGendt, S.
    Heyns, M.
    2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL, 2006, : 365 - +
  • [50] Sliding Mode Control Strategy for Solar Charging of High Energy Lithium Batteries
    Mlayah, Asma
    Khedher, Adel
    INTERNATIONAL JOURNAL OF RENEWABLE ENERGY RESEARCH, 2018, 8 (03): : 1621 - 1630
12345