Charging control on high energy implanters: A process requirement demonstrated by plasma damage monitoring

被引：1

作者：

Cantin, C. ^{[2
]}

Laviron, C. ^{[3
]}

Gove, G. ^{[1
]}

机构：

[1] NXP Semicond ICN 8, NL-6534 AE Nijmegen, Netherlands

[2] NXP Semicond, F-38926 Crolles, France

[3] CEA, LETI, F-38054 Grenoble 9, France

来源：

MICROELECTRONICS RELIABILITY | 2009年 / 49卷 / 02期

关键词：

D O I：

10.1016/j.microrel.2008.11.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Charging phenomena is one of the main problems faced in ion implantation. Anti-charging system such as plasma flood gun (PFG) are currently running on high current and medium current implanters to reduce potential charging damage on device structures. However, in a conventional production line, high energy implantation steps are still often used without any charge compensation technique. Faced with micro-arcing defects detected after Well implantation steps on production lots, we have clearly demonstrated that the defectivity issue was eradicated by enabling the PFG system on the VIISta3000 high energy implanter. In addition we have investigated charging as a function of PFG properties by plasma damage monitoring (PDM) and proved that voltages developed on oxidized wafers processed on the VIISta3000 were not insignificant. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：209 / 214

页数：6

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