Observation of Interfacial Antiferromagnetic Coupling between Magnetic Topological Insulator and Antiferromagnetic Insulator

被引:28
|
作者
Wang, Fei [1 ,2 ]
Xiao, Di [1 ]
Yuan, Wei [3 ,4 ]
Jiang, Jue [1 ]
Zhao, Yi-Fan [1 ]
Zhang, Ling [1 ]
Yao, Yunyan [3 ]
Liu, Wei [2 ]
Zhang, Zhidong [2 ]
Liu, Chaoxing [1 ]
Shi, Jing [4 ]
Han, Wei [3 ,5 ]
Chan, Moses H. W. [1 ]
Samarth, Nitin [1 ]
Chang, Cui-Zu [1 ]
机构
[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[2] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
[3] Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China
[4] Univ Calif Riverside, Dept Phys, Riverside, CA 92521 USA
[5] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
基金
中国国家自然科学基金;
关键词
Topological insulators; antiferromagnetic insulators; exchange coupling effect; antiferromagnetic coupling; exchange bias effect; POSITIVE EXCHANGE BIAS; PHASE-TRANSITION; FERROMAGNETISM; REALIZATION; STATE;
D O I
10.1021/acs.nanolett.9b00027
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Inducing magnetic orders in a topological insulator (TI) to break its time reversal symmetry has been predicted to reveal many exotic topological quantum phenomena. The manipulation of magnetic orders in a TI layer can play a key role in harnessing these quantum phenomena toward technological applications. Here we fabricated a thin magnetic TI film on an antiferromagnetic (AFM) insulator Cr2O3 layer and found that the magnetic moments of the magnetic TI layer and the surface spins of the Cr2O3 layers favor interfacial AFM coupling. Field cooling studies show a crossover from negative to positive exchange bias clarifying the competition between the interfacial AFM coupling energy and the Zeeman energy in the AFM insulator layer. The interfacial exchange coupling also enhances the Curie temperature of the magnetic TI layer. The unique interfacial AFM alignment in magnetic TI on AFM insulator heterostructures opens a new route toward manipulating the interplay between topological states and magnetic orders in spin-engineered heterostructures, facilitating the exploration of proof-of-concept TI-based spintronic and electronic devices with multifunctionality and low power consumption.
引用
收藏
页码:2945 / 2952
页数:8
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