Magnetic Proximity Effect in an Antiferromagnetic Insulator/Topological Insulator Heterostructure with Sharp Interface

被引：4
|
作者：
Liu, Yuxin [1 ,2 ]
Niu, Xuefan [1 ,2 ]
Zhang, Rencong [1 ,2 ]
Zhang, Qinghua [1 ,2 ]
Teng, Jing [1 ,2 ]
Li, Yongqing [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2021年 / 38卷 / 05期
基金：
中国国家自然科学基金;
关键词：
TOPOLOGICAL INSULATOR;
D O I：
10.1088/0256-307X/38/5/057303
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report an experimental study of electron transport properties of MnSe/(Bi,Sb)(2)Te-3 heterostructures, in which MnSe is an antiferromagnetic insulator, and (Bi,Sb)(2)Te-3 is a three-dimensional topological insulator (TI). Strong magnetic proximity effect is manifested in the measurements of the Hall effect and longitudinal resistances. Our analysis shows that the gate voltage can substantially modify the anomalous Hall conductance, which exceeds 0.1 e (2)/h at temperature T = 1.6 K and magnetic field mu (0) H = 5 T, even though only the top TI surface is in proximity to MnSe. This work suggests that heterostructures based on antiferromagnetic insulators provide a promising platform for investigating a wide range of topological spintronic phenomena.
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页数：5
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