A 40W Ultra Broadband LDMOS Power Amplifier

被引:0
|
作者
Li, Kaldi [1 ]
Shi, Tiefeng [1 ]
Di, Song [1 ]
Yin, William [1 ]
机构
[1] Freescale Semicond Inc, 192 Liangjing Rd, Shanghai 201203, Peoples R China
关键词
Power amplifiers; broadband amplifier; linear power amplifier;
D O I
暂无
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
An ultra-broadband power amplifier using a Freescale 50V LDMOS device is presented. The power amplifier can deliver 40W PEP power from 2 to 800 MHz with better than 30dBc IM3 at 10 kHz 2-tone spacing. The power gain is 19 dB with +/- 1 dB gain flatness across the band at class A operation and 15 dB +/- 1 dB gain flatness at class AB configuration, each with a 36 V supply voltage. The drain efficiency is better than 30% from 2 MHz to 1 GHz. The impedance matching technique utilizes a two-section broadband balun impedance transformer with ferrite beads which allow the device to operate at low frequency down to 2MHz, and a series R-C feedback loop to improve the gain flatness. The broadband matching methodology based on the non-linear model is introduced as well.
引用
收藏
页数:4
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