Measurements towards the materials sources of line-edge roughness in chemically amplified photoresists

被引：0
|
作者：
Lin, Eric K.
Prabhu, Vivek M.
Vogt, Bryan D.
Kang, Shuhui
Rao, Ashwin
Satija, Sushil K.
Wu, Wen-li
Turnquest, Karen
机构：
[1] Natl Inst Stand & Technol, Div Polymers, Gaithersburg, MD 20899 USA
[2] Natl Inst Stand & Technol, Ctr Neutron Res, Gaithersburg, MD 20899 USA
[3] Int SEMATECH, Lithog Dept, Austin, TX USA
来源：
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 2006年 / 231卷
关键词：
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
267-POLY
引用
收藏
页数：1
相关论文
共 50 条
  • [31] The lithography expert - Line-edge roughness, part 1
    Mack, Chris A.
    [J]. MICROLITHOGRAPHY WORLD, 2007, 16 (01): : 13 - +
  • [32] Impact of Channel Line-Edge Roughness On Junctionless FinFET
    YingXiao
    Zhang, Baili
    Lou, Haijun
    Cui, Xiaole
    Lin, Xinnan
    Zhang, Lining
    [J]. PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2015, : 106 - 109
  • [33] On the Role of Line-Edge Roughness on the Diffusion and Localization in GNRs
    Pourfath, M.
    Yazdanpanah, A.
    Fathipour, M.
    Kosina, H.
    [J]. 2010 14TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2010), 2010, : 45 - 48
  • [34] Simulation of surface and line-edge roughness formation in resists
    Patsis, GP
    Gogolides, E
    [J]. MICROELECTRONIC ENGINEERING, 2001, 57-8 : 563 - 569
  • [35] Optimal Method for Correct Measurement of Line-edge roughness
    Sun, Insun
    Jeong, Hong
    [J]. 2012 6TH INTERNATIONAL CONFERENCE ON NEW TRENDS IN INFORMATION SCIENCE, SERVICE SCIENCE AND DATA MINING (ISSDM2012), 2012, : 112 - 115
  • [36] Controlling line-edge roughness to within reasonable limits
    Cobb, J
    Rauf, S
    Thean, A
    Dakshina-Murthy, S
    Stephens, T
    Parker, C
    Peters, R
    Rao, V
    [J]. ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XX, PTS 1 AND 2, 2003, 5039 : 376 - 383
  • [37] Mask-roughness-induced line-edge roughness: rule of thumb
    McClinton, Brittany M.
    Naulleau, Patrick P.
    [J]. JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2010, 9 (04):
  • [38] Line edge roughness reduction by plasma curing photoresists
    Mahorowala, AP
    Chen, KJ
    Sooriyakumaran, R
    Clancy, A
    Murthy, D
    Rasgon, S
    [J]. ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXII, PT 1 AND 2, 2005, 5753 : 380 - 389
  • [39] Line-Edge Roughness performance targets for EUV Lithography
    Brunner, Timothy A.
    Chen, Xuemei
    Gabor, Allen
    Higgins, Craig
    Sun, Lei
    Mack, Chris A.
    [J]. EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY VIII, 2017, 10143
  • [40] Relationship between Line Edge Roughness and Fluctuation of Acid Concentration in Chemically Amplified Resist
    Kozawa, Takahiro
    Yamamoto, Hiroki
    Tagawa, Seiichi
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (09)
12345