Enhancement of multi-photon processes with carrier injection in a GaAs/AlGaAs quantum well laser structure

被引：2
|
作者：
Chen, HS [1 ]
Liu, SL [1 ]
Yang, CC [1 ]
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Grad Sch Electroopt Engn, Taipei 10764, Taiwan
来源：
OPTICS COMMUNICATIONS | 2004年 / 235卷 / 1-3期
关键词：
D O I：
10.1016/j.optcom.2004.01.046
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Enhancements of two-photon and three-photon absorption coefficients with increasing carrier density at photon energy near one-half band gap in a GaAs/AlGaAs quantum well laser structure were observed. The results were obtained by calibrating 1560 rim, 130 fs laser transmission data through the laser diode with lasing wavelength around 840 nm. Such enhancements are mainly attributed to the existence of hole states in the valence subbands during carrier injection. With the hole states, two-photon absorption finds more transition paths for a higher transition rate. Such hole states are less effective to the two-photon transition in the TM polarization. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：163 / 167
页数：5
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