Suppressed intermixing in InAlGaAs/ AlGaAs/GaAs and AlGaAs/GaAs quantum well heterostructures irradiated with a KrF excimer laser

被引：0
|
作者：
J. Genest
J.J. Dubowski
V. Aimez
机构：
[1] Université de Sherbrooke,Centre de recherche en Nanofabrication et Nanocaractériasation (CRN2), Département de Génie Électrique et Génie Informatique
来源：
Applied Physics A | 2007年 / 89卷
关键词：
GaAs; Quantum Well; Gallium Oxide; Rapid Thermal Annealer Treatment; Laser Treated Sample;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The influence of gallium arsenide surface modification induced by irradiation with a KrF excimer laser on the magnitude of the quantum well (QW) intermixing effect has been investigated in InAlGaAs/AlGaAs/GaAs QW heterostructures. The irradiation in an air environment with laser pulses of fluences between 60 and 100 mJ/cm2 has resulted in the formation of a gallium oxide-rich film at the surface. Following the annealing at 900 °C, up to 35 nm suppression of the band gap blue shift was observed in all the laser irradiated samples when compared to the non-irradiated samples. The origin of suppression has been discussed in terms of stress controlled diffusion.
引用
收藏
页码：423 / 426
页数：3
相关论文
共 50 条
  • [1] Suppressed intermixing in InAlGaAs/AlGaAs/GaAs and AlGaAs/GaAs quantum well heterostructures irradiated with a KrF excimer laser
    Genest, J.
    Dubowski, J. J.
    Aimez, V.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2007, 89 (02): : 423 - 426
  • [2] UV laser controlled quantum well intermixing in InAlGaAs/GaAs heterostructures
    Genest, J.
    Dubowski, J. J.
    Aimez, V.
    Paucl, N.
    Drouin, D.
    Post, M.
    COLA'05: 8TH INTERNATIONAL CONFERENCE ON LASER ABLATION, 2007, 59 : 605 - +
  • [3] The kinetics of intermixing of GaAs/AlGaAs quantum confined heterostructures
    Helmy, AS
    Aitchison, JS
    Marsh, JH
    APPLIED PHYSICS LETTERS, 1997, 71 (20) : 2998 - 3000
  • [4] Gratinglike modulation of GaAs/AlGaAs quantum well intermixing fabricated with laser interference
    Shin, JJ
    Gurtler, S
    Chang, Y
    Yang, CC
    APPLIED PHYSICS LETTERS, 1998, 72 (22) : 2808 - 2810
  • [5] Photoluminescence studies of anodic-oxide-induced intermixing of GaAs/AlGaAs quantum well heterostructures
    Burke, PT
    Gal, M
    Yuan, S
    Kim, Y
    Jagadish, C
    1996 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS, 1996, : 122 - 125
  • [6] On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates
    A. E. Zhukov
    L. V. Asryan
    E. S. Semenova
    F. I. Zubov
    N. V. Kryzhanovskaya
    M. V. Maximov
    Semiconductors, 2015, 49 : 935 - 938
  • [7] On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates
    Zhukov, A. E.
    Asryan, L. V.
    Semenova, E. S.
    Zubov, F. I.
    Kryzhanovskaya, N. V.
    Maximov, M. V.
    SEMICONDUCTORS, 2015, 49 (07) : 935 - 938
  • [8] LPE growth of AlGaAs-GaAs quantum well heterostructures
    Mukai, Seiji
    Watanabe, Masanobu
    Itoh, Hideo
    Yajima, Hiroyoshi
    Yano, Tomomi
    Woo, Jong-Chun
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1989, 28 (10): : 1725 - 1727
  • [9] LPE GROWTH OF ALGAAS-GAAS QUANTUM WELL HETEROSTRUCTURES
    MUKAI, S
    WATANABE, M
    ITOH, H
    YAJIMA, H
    YANO, T
    WOO, JC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (10): : L1725 - L1727
  • [10] SYSTEMATICS OF LASER OPERATION IN GAAS/ALGAAS MULTIQUANTUM WELL HETEROSTRUCTURES
    ZIELINSKI, E
    SCHWEIZER, H
    HAUSSER, S
    STUBER, R
    PILKUHN, MH
    WEIMANN, G
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) : 969 - 976
12345