Dependence on an oxide trap's location of random telegraph noise (RTN) in GIDL current of n-MOSFET

被引：5
|
作者：
Quan Nguyen Gia [1 ]
Yoo, Sung-Won [1 ]
Lee, Hyunseul [1 ]
Shin, Hyungcheol [1 ]
机构：
[1] Seoul Natl Univ, Seoul 151742, South Korea
来源：
SOLID-STATE ELECTRONICS | 2014年 / 92卷
关键词：
Gate-induced drain leakage (GIDL); Random telegraph noise (RTN); Location of an oxide trap; Amplitude of Delta I-GIDL/I-GIDL; LEAKAGE CURRENT;
D O I：
10.1016/j.sse.2013.10.018
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigated the variation of random telegraph noise (RTN) in gate-induced drain leakage (GIDL) current by changing location of a trap inside the gate oxide of n type metal-oxide semiconductor field effect transistor (n-MOSFET). The dependence on drain to gate bias was then considered. This approach has been assessed with Technology Computer Aided Designed (TCAD) simulations. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：20 / 23
页数：4
相关论文
共 50 条
  • [1] Extraction of trap energy and location from random telegraph noise in gate leakage current (Ig RTN) of metal-oxide semiconductor field effect transistor (MOSFET)
    Cho, Heung-Jae
    Lee, Sanghoon
    Park, Byung-Gook
    Shin, Hyungcheol
    SOLID-STATE ELECTRONICS, 2010, 54 (04) : 362 - 367
  • [2] Analysis and modeling for random telegraph noise of GIDL current in saddle MOSFET for DRAM application
    Moon, Dyukyoung
    Lee, Hyunseul
    Shin, Changhwan
    Shin, Hyungcheol
    IEICE ELECTRONICS EXPRESS, 2014, 11 (13):
  • [3] N-MOSFET oxide trap characterization induced by nitridation process using RTS noise analysis
    Leyris, C.
    Martinez, F.
    Hoffmann, A.
    Valenza, A.
    Vildeuil, J. C.
    MICROELECTRONICS RELIABILITY, 2007, 47 (01) : 41 - 45
  • [4] Correlation between hot-carrier-induced interface states and GIDL current increase in N-MOSFET's
    Lai, PT
    Xu, JP
    Wong, WM
    Lo, HB
    Cheng, YC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (02) : 521 - 528
  • [5] Interface-state-induced degradation of GIDL current in n-MOSFET's under hot-carrier stress
    Lai, PT
    Xu, JP
    Zeng, X
    Liu, BY
    1996 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, 1996, : 102 - 105
  • [6] Study on the Oxide Trap Distribution in a Thin Gate Oxide from Random Telegraph Noise in the Drain Current and the Gate Leakage Current
    Cho, Heung-Jae
    Son, Younghwan
    Lee, Sanghoon
    Lee, Jong-Ho
    Park, Byung-Gook
    Shin, Hyungcheol
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2011, 58 (05) : 1518 - 1521
  • [7] Characterization of random telegraph noise in 0.8 μm irradiated MOSFET's
    Barros, C
    Valenza, M
    de Murcia, M
    Rigaud, D
    NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE, 1997, : 228 - 231
  • [8] New observation and improvement in GIDL current of N-MOSFET's with various kinds of gate oxides under hot-carrier stress
    Lai, PT
    Xu, JP
    Zeng, X
    Cheng, YC
    ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 1996, : 46 - 49
  • [9] Greatly suppressed stress-induced shift of GIDL in N2O-based n-MOSFET's
    Xu, JP
    Lai, PT
    Huang, L
    Lo, HB
    Cheng, YC
    SOLID-STATE ELECTRONICS, 1998, 42 (09) : 1665 - 1669
  • [10] Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's
    Wang, TH
    Chang, TE
    Chiang, LP
    Huang, CM
    Guo, JC
    1996 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS, 1996, : 232 - 233
12345