Dependence on an oxide trap's location of random telegraph noise (RTN) in GIDL current of n-MOSFET

被引：5

作者：

Quan Nguyen Gia ^{[1
]}

Yoo, Sung-Won ^{[1
]}

Lee, Hyunseul ^{[1
]}

Shin, Hyungcheol ^{[1
]}

机构：

[1] Seoul Natl Univ, Seoul 151742, South Korea

来源：

SOLID-STATE ELECTRONICS | 2014年 / 92卷

关键词：

Gate-induced drain leakage (GIDL); Random telegraph noise (RTN); Location of an oxide trap; Amplitude of Delta I-GIDL/I-GIDL; LEAKAGE CURRENT;

D O I：

10.1016/j.sse.2013.10.018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the variation of random telegraph noise (RTN) in gate-induced drain leakage (GIDL) current by changing location of a trap inside the gate oxide of n type metal-oxide semiconductor field effect transistor (n-MOSFET). The dependence on drain to gate bias was then considered. This approach has been assessed with Technology Computer Aided Designed (TCAD) simulations. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：20 / 23

页数：4

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