Microwave noise performance of AlGaN/GaN HEMTs

被引：36

作者：

Ping, AT ^{[1
]}

Piner, E

Redwing, J

Khan, MA

Adesida, I

机构：

[1] TriQuint Semicond, Hillsboro, OR 97124 USA

[2] Univ Illinois, Microelect Lab, Urbana, IL 61801 USA

[3] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[4] ATMI Epitron, Phoenix, AZ 85027 USA

[5] Univ S Carolina, Dept Elect & Comp Engn, Columbia, SC 29208 USA

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 02期

关键词：

D O I：

10.1049/el:20000152

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have characterised the microwave noise performance of AlGaN/GaN HEMTs epitaxially grown on insulating BC substrates. The minimum noise figure for 0.25 mu m gate-length devices was measured to be 0.77dB at 5 GHz and 1.06dB at 10GHz. The measured minimum noise figures are comparable to those exhibited by GaAs-based FETs, which demonstrates the viability of AlGaN/GaN HEMTs for low-noise applications.

引用

页码：175 / 176

页数：2

共 50 条

[41] Polarization dependent charge control model for microwave performance assessment of AlGaN/GaN/AlGaN double heterostructure HEMTs
Nisha Chugh
Monika Bhattacharya
Manoj Kumar
S. S. Deswal
R. S. Gupta
[J]. Journal of Computational Electronics, 2018, 17 : 1229 - 1240
[42] Investigation of high frequency noise and power in AlGaN/GaN HEMTs
Sakalas, P.
Schroter, M.
Xing, H.
Jena, D.
Simon, J.
Liberis, J.
Shimukovitch, A.
Matulinois, A.
[J]. NOISE AND FLUCTUATIONS, 2007, 922 : 171 - +
[43] Status of AlGaN/GaN HEMTs for microwave and power switching applications
Mishra, UK
Zhang, NQ
Wu, YF
[J]. COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 11 - 19
[44] Delta doped AlGaN and AlGaN/GaN HEMTs: Pathway to improved performance?
Flynn, JS
Xin, H
Dion, JA
Hutchins, EL
Antunes, H
Fieschi-Corso, L
Van Egas, R
Brandes, GR
[J]. 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2327 - 2330
[45] Relaxation of low-frequency noise in AlGaN/GaN HEMTs
Satka, A.
Rendek, K.
Priesol, J.
[J]. NINTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, 2012, : 199 - 202
[46] Delta doped AlGaN and AlGaN/GaN HEMTs: Pathway to improved performance?
[J]. Flynn, J.S. (jflynn@atmi.com), (Wiley-VCH Verlag):
[47] Low frequency noise and screening effects in AlGaN/GaN HEMTs
Garrido, JA
Calle, F
Muñoz, E
Izpura, I
Sánchez-Rojas, JL
Li, R
Wang, KL
[J]. ELECTRONICS LETTERS, 1998, 34 (24) : 2357 - 2359
[48] Influence of epitaxial structure in the noise figure of AlGaN/GaN HEMTs
Sanabria, C
Xu, HT
Palacios, T
Chakrahorty, A
Heikman, S
Mishra, UK
York, RA
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2005, 53 (02) : 762 - 769
[49] Wideband AlGaN/GaN HEMTs on SiC for low noise applications
Lu, Wu
Yang, J.W.
Khan, M.Asif
Adesida, Ilesanmi
[J]. Annual Device Research Conference Digest, 2000, : 39 - 40
[50] Thermal characterization of the intrinsic noise parameters for AlGaN/GaN HEMTs
Thorsell, M.
Andersson, K.
Fagerlind, M.
Sudow, M.
Nilsson, P. -A.
Rorsman, N.
[J]. 2008 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4, 2008, : 462 - 465

← 1 2 3 4 5 →