Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors

被引：47
|
作者：
Nenadovic, N [1 ]
Mijalkoyic, S
Nanver, LK
Vandamme, LKJ
d'Alessandro, V
Schellevis, H
Slotboom, JW
机构：
[1] Delft Univ Technol, DIMES, Lab ECTM, NL-2600 GB Delft, Netherlands
[2] Delft Univ Technol, DIMES, Lab HiTeC, NL-2600 GB Delft, Netherlands
[3] Eindhoven Univ Technol, Dept Elect Engn, NL-5600 MB Eindhoven, Netherlands
[4] Univ Naples Federico II, Dept Elect & Telecommun Engn, I-80125 Naples, Italy
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2004年 / 39卷 / 10期
关键词：
bipolar transistor; electrothermal modeling; self-heating; silicon-on-glass; thermal coupling; thermal impedance;
D O I：
10.1109/JSSC.2004.833766
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A measurement system comprised of an ultra-low-distortion function generator, lock-in amplifier, and semiconductor parameter analyzer is used for sensitive extraction of the small-signal thermal impedance network of bipolar devices and circuits. The extraction procedure is demonstrated through measurements on several silicon-on-glass NPN test structures. Behavioral modeling of the mutual thermal coupling obtained by fitting a multipole rational complex function to measured data is presented.
引用
收藏
页码：1764 / 1772
页数：9
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