Photoluminescence and photoconductivity of a thin film of oxidized nanoporous silicon doped with erbium ions

被引：2

作者：

Grigor'ev, L. V. ^{[1
]}

Mikhailov, A. V. ^{[2
]}

机构：

[1] ITMO Univ, St Petersburg, Russia

[2] AO SI Vavilov State Opt Inst, St Petersburg, Russia

来源：

JOURNAL OF OPTICAL TECHNOLOGY | 2015年 / 82卷 / 11期

关键词：

D O I：

10.1364/JOT.82.000777

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This paper presents the results of an investigation of the photoluminescence and photoconductivity of a thin film of oxidized nanoporous silicon doped with erbium ions. Structural studies showed that silicon clusters of spherical shape and sizes from 5 to 15 nm are present in the layer. Investigation of the photoluminescence spectra showed that they include intense peaks characteristic of the luminescence of erbium ions. Study of the spectral dependences of the photoconductivity revealed that the nanocomposite under investigation has a complex system of the energy distribution of the traps responsible for the photostimulated generation and recombination of minority charge carriers. (C) 2015 Optical Society of America.

引用

页码：777 / 780

页数：4

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