Development of a metrology to characterize EUV optics at 13.5nm

Light sources, focusing elements and detectors working at wavelengths from 5nm to 40nm, so called EUV, are of increasing interest for the semiconductor industry, especially for lithography. A metrology has been developed to characterize modified nested Wolter grazing incidence optics which act as the condenser optic. It consists of a monochromatic EUV source and a MCP detector. The EUV source is designed to emit radiation at a wavelength of 13.5nm into a solid angle of up to 1.8sr, which is realized by a silicon-zirconium target used in transmission. Detector and EUV source have been calibrated. In particular, the angular dependences of the source radiation and the detector efficiency have been investigated. The calibrated metrology could be used for measuring the imaging properties of modified nested Wolter optics revealing the point-spread function (psf), the focal length and the effective collecting area. In this paper we will report on experimental setup in the X-ray test facility "PUMA", developing the EUV source, multi-channel plate detector properties, and the results of testing a modified EUV optics.