Diffraction studies of submonolayer Sr structures on the Si (001) surface

被引:7
|
作者
Reiner, J. W. [1 ]
Segal, Y. [1 ]
Garrity, K. F. [2 ]
Hong, H. [3 ]
Ismail-Beigi, S. [1 ,2 ]
Ahn, C. H. [1 ,2 ]
Walker, F. J. [1 ]
机构
[1] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA
[2] Yale Univ, Dept Phys, New Haven, CT 06520 USA
[3] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA
来源
基金
美国国家科学基金会;
关键词
X-RAY-DIFFRACTION; INTERFACE; ADSORPTION; SILICON; SI(100); PHASE; OXIDES; STM;
D O I
10.1116/1.3139866
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using electron and synchrotron x-ray diffraction, the authors investigate the reconstructions induced on the Si (001) surface by the presence of a submonolayer of Sr atoms. These Sr surface phases on Si (001) are the first steps in the synthesis of crystalline oxide on silicon heterostructures. Through the use of in situ reflection high energy electron diffraction, the authors observe 2 x 1 --> 2 x 3 --> 1 x 2 transitions in the surface symmetry as 1/2 monolayer Sr is deposited at 650 degrees C. Anomalous synchrotron x-ray diffraction studies of the 2 x 3 structure are consistent with a model where each Sr atom replaces two silicon dimers, resulting in a change in the surface Si stoichiometry. X-ray diffraction from the surface formed when the Sr deposition occurs at room temperature shows a different dependence on x-ray energy and is consistent with a surface phase consisting of Sr adsorbed onto a stoichiometric Si surface. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3139866]
引用
收藏
页码:2015 / 2019
页数:5
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